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Micron intros UFS 4.0 storage for flagships: up to 4,300Mbps read speeds and 4,000Mbps write speeds!

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While UFS 4.0 is already present on some recent flagship phones, storage maker Micron introduces its own versions.
Micron intros UFS 4.0 storage for flagships: up to 4,300Mbps read speeds and 4000Mbps write speeds!
Micron's announcement

Micron's new storage tech for flagship phones!

The new technology will be utilized to produce storage with capacities of 256GB, 512GB, and 1TB. While the mass production begins H2 of year 2023 so it may take some time for first Micron branded UFS 4.0 storage to arrive.
Micron intros UFS 4.0 storage for flagships: up to 4,300Mbps read speeds and 4000Mbps write speeds!
UFS 4.0 specs 

The said storage is based on 232-layer TLC flash (triple-level cells that stores three bits per cell). Which the firm claims that its six-plane NAND architecture allows for better random read speed. In comparison to the previous gen, it is 100 percent higher in terms of write bandwidth and 75 percent higher in read bandwidth.
Micron UFS 4.0 speed specs
Micron UFS 4.0 speed specs

Specifically, the Micron UFS 4.0 storage features up to 4,300Mbps sequential read speeds and up to 4,000Mbps write speeds. In case you dont know yet, that is higher than Samsung's UFS 4.0, particularly in the write rating.

Moreover, this new tech is 25 percent more power efficient and brings 10 percent lower write latency.

Right now, the firm has already shipped qualification samples to "select global smartphone and chipset makers".

What do you guys think?

Source: Micron

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